So, I finally got my STM32F3 working properly, and I am able to get a nice Side-Channel leakage for me to do some analyzing.
Now, I want to move on to the STM32F415 target. I am now able to successfully program the chip. However, I’ve read the wiki page (https://wiki.newae.com/Targets_with_Internal_Regulators) and notice it’s a bit tricky to get a proper power trace. After a bit of experimenting, I’ve encounter several problems, and I hope you guys may have some answers.
what is the maximum voltage I can use before damaging the device?
(I’ve skim through the data sheet, and the V_cap was not designed for us to input voltages, therefore, I can’t seem to find a warning for maximum input voltage)
Although I’ve managed to get a power trace with Side-Channel leakage, there are lots of noisy spikes, which I’ve not seen in the other targets (ATmega328p, XMEGA, STM32F3). I am wondering, are those spikes normal? or I’ve somehow already damaged my target device? Is there a way to remove those spikes?
There are some unintended jittering in the power trace of my AES implementation, which didn’t appear in other targets. Why is that? Is there a cache or some branch prediction mechanism in STM32F4?